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IXBH5N160G 1600V, 5A Monolithic Bipolar MOS Transistor LTE electrically insulated case

IXBH5N160G 1600V, 5A Monolithic Bipolar MOS Transistor LTE electrically insulated caseIt is a High Voltage BIMOSFET that can replace high voltage MOSFETs because of its much lower voltage drop and control that is compatible with MOSFETs. Fast switching for high frequency operation, a gate voltage of 10V, and reverse conduction capability Furthermore, this comes in the industry standard TO 220AB TO 247AD epoxy satisfies the UL94V 0 box. Switched mode power supplies, DC DC converters, X ray, and laser generators. resonant converters and

SKU: 36574044822 · From equiscorp.hu

4.4
USD183.50 USD204.50

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Description

electrically insulated case

Resistance Value 18k ohm Color Code Brown

which are Brown

Compatible Battery 32650 Material ABS Size 68x34x8

IXBH5N160G 1600V, 5A Monolithic Bipolar MOS Transistor LTE electrically insulated caseIt is a High Voltage BIMOSFET that can replace high voltage MOSFETs because of its much lower voltage drop and control that is compatible with MOSFETs. Fast switching for high frequency operation, a gate voltage of 10V, and reverse conduction capability Furthermore, this comes in the industry standard TO 220AB TO 247AD epoxy satisfies the UL94V 0 box. Switched mode power supplies, DC DC converters, X ray, and laser generators. resonant converters and

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